Vertical semiconductor deep ultraviolet light emitting diodes on a nanowire-assisted aluminum nitride buffer layer Scientific Reports
A parasitic EL emission peak at around 400 nm is seen, which could be originated from the deep levels in AlGaN alloys59,60. Its intensity, however, is significantly lower compared to the main EL emission peak. Figure4c shows the light output power as a function of the injection current under a CW biasing.
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The automotive and transportation industries are also considering the implementation of UV LED curing applications. Automotive coatings technology is constantly developing new, efficient, cost-effective auto body and paint repair methods. The range of LED solutions for UV curing is applicable for curing UV-cured primers and UV-cured body fillers and is designed to accommodate any small or large-scale paint repair job. However, another key parameter is reducing the concentration of defects which cause non-radiative recombination in the active region of the device. That is why the dislocation density plays such an important role in optoelectronics since they are a primary source of non-radiative recombination centers.
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The schematic of the structure is shown in Fig.1a, which starts with a thin (1–2 nm) AlN layer, followed by a thin (50–100 nm) GaN nanowire layer. Figure1b shows the reflection high-energy electron diffraction pattern during the growth of the GaN nanowires. Regularly arranged dots are seen, suggesting a 3-dimensional growth. This RHEED feature is different from the arcs as often observed from self-organized GaN nanowires, which indicates the improvement of the nanowire vertical alignment with respect to the substrate, due to the use of the thin pre-nanowire AlN layer47,48.
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Illustrated in the inset of Fig.3c is a device size dependent current under a forward voltage of 12 V, and it is seen that the current increase is proportional to the device size increase, indicating a uniform current injection. For device fabrication, we did not use chemical etching to isolate devices with different sizes. The isolation was obtained by the limitation of the current spreading length in the vertical injection scheme. Therefore, by placing p-contact with a separation on the order of several hundred μm, devices can be naturally isolated.